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mrf5p21180hr6 1 rf device data freescale semiconductor rf power field effect transistor n--channel enhancement--mode lateral mosfet designed for w--cdma base station applications with freque ncies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplif ier applications. to be used in class ab for pcn--pcs/cellular radio and wll app lications. ? typical 2--carrier w--cdma performance: v dd = 28 volts, i dq = 1600 ma, pout = 38 watts avg., channel bandwidth = 3.84 mhz, par = 8.5 db @ 0.01% probability on ccdf. power gain 14 db drain efficiency 25.5% im3 @ 10 mhz offset --37.5 dbc in 3.84 mhz channel bandwidth acpr @ 5 mhz offset --41 dbc in 3.84 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 28 vdc, 2140 mhz, 180 watts cw output power features ? characterized with series equivalent large--signal imped ance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? lower thermal resistance package ? low gold plating thickness on leads, 40 nominal. ? rohs compliant ? in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 530 3.0 w w/ c storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 80 c, 180 w cw case temperature 71 c, 38 w cw r jc 0.31 0.33 c/w 1. mttf calculator available at http://www.freescale.com /rf . select software & tools/development tools/calculators t o access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf5p21180hr6 rev. 3, 10/2008 freescale semiconductor technical data mrf5p21180hr6 2110--2170 mhz, 38 w avg., 28 v 2 x w--cdma lateral n--channel rf power mosfet case 375d--05, style 1 ni--1230 ? freescale semiconductor, inc., 2008. all rights reserved.
2 rf device data freescale semiconductor mrf5p21180hr6 table 3. esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) charge device model c7 (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0) i dss 1 adc gate--source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss 1 adc on characteristics gate threshold voltage (1) (v ds = 10 vdc, i d = 200 adc) v gs(th) 2.5 2.8 3.5 vdc gate quiescent voltage (3) (v ds = 28 vdc, i d = 1600 madc) v gs(q) 3.6 vdc drain--source on--voltage (1) (v gs = 10 vdc, i d = 2 adc) v ds(on) 0.26 0.3 vdc forward transconductance (1) (v ds = 10 vdc, i d = 2 adc) g fs 5 s dynamic characteristics (1,2) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss 1.7 pf functional tests (3) (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1600 ma, p out = 38 w avg., f = 2157.5 mhz, 2--carrier w--cdma, 3.84 mhz channel bandwidth carriers. a cpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf. power gain g ps 12.5 14 db drain efficiency d 23 25.5 % intermodulation distortion im3 --37.5 --35 dbc adjacent channel power ratio acpr --41 --38 dbc input return loss irl --14 --9 db 1. each side of device measured separately. 2. part internally matched both on input and output. 3. measurement made with device in push--pull configuratio n.
mrf5p21180hr6 3 rf device data freescale semiconductor figure 1. mrf5p21180hr6 test circuit schematic z1, z22 1.000 x 0.066 microstrip z2, z21 0.760 x 0.113 microstrip z3, z20 0.068 x 0.066 microstrip z4, z19 1.672 x 0.066 microstrip z5, z6 0.318 x 0.066 microstrip z7, z8 0.284 x 0.180 microstrip z9, z10 0.094 x 0.650 microstrip r1 r2 c23 + c13 c11 c5 z11 z1 z2 rf input c1 z3 z5 z7 z9 c2 z4 z6 z8 z10 z12 r3 c24 + c14 c12 c6 r4 r5 z15 z16 c8 + c9 c19 + c20 c16 + c18 + v supply c7 + c10 c21 + c22 c15 + c17 + c4 z13 z17 z19 c3 z23 z18 z20 z21 z22 rf output dut z11, z12 1.030 x 0.035 microstrip z13, z14 0.083 x 0.650 microstrip z15, z16 0.550 x 0.058 microstrip z17, z18 0.353 x 0.066 microstrip z23, z24 0.417 x 0.650 microstrip z25, z26 0.161 x 0.650 microstrip pcb taconic rf--35, 0.030 , r = 3.5 v bias z25 z24 z26 z14 v bias v supply r6 table 5. mrf5p21180hr6 test circuit component designation s and values part description part number manufacturer c1, c2, c3, c4 30 pf chip capacitors atc100b300jt500xt atc c5, c6, c7, c8 5.6 pf chip capacitors atc100b5r6jt500xt atc c9, c10 10 f tantalum capacitors t495x106k035at kemet c11, c12 1000 pf chip capacitors atc100b102jt500xt atc c13, c14, c15, c16 0.1 f chip capacitors cdr33bx104akys kemet c17, c18, c19, c20, c21, c22 22 f tantalum capacitors t491x226k035at kemet c23, c24 1.0 f tantalum capacitors t491c105m050at kemet r1, r2, r3, r4 10 , 1/4 w chip resistors crcw120610r0fkea vishay r5, r6 1.0 k , 1/4 w chip resistor crcw12061001fkea vishay
4 rf device data freescale semiconductor mrf5p21180hr6 figure 2. mrf5p21180hr6 test circuit component layout c1 r1 r2 c2 c3 c4 c5 c6 c7 c8 c9 c10 c11 c12 c13 c14 c15 c16 c17 c18 c19 c20 cut out area c21 c22 c24 c23 r3 r4 r5 v gg v dd mrf5p21180 rev 5 r6 v gg v dd freescale has begun the transition of marking printed circu it boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will h ave no impact on form, fit or function of the current product.
mrf5p21180hr6 5 rf device data freescale semiconductor typical characteristics 2200 5 15 2080 --45 40 irl g ps acpr im3 f, frequency (mhz) figure 3. 2--carrier w--cdma broadband performance g ps , power gain (db) v dd = 28 vdc, p out = 38 w (avg.), i dq = 1600 ma 2--carrier w--cdma, 10 mhz carrier spacing 3.84 mhz channel bandwidth par = 8.5 db @ 0.01% probability (ccdf) im3 (dbc), acpr (dbc) --30 --10 --15 --20 --25 input return loss (db) irl, --35 14 35 13 30 12 25 11 20 10 --20 9 --25 8 --30 7 --35 6 --40 2100 2120 2140 2160 2180 300 12.5 15 20 i dq = 2400 ma 2000 ma p out , output power (watts) pep figure 4. two--tone power gain versus output power g ps , power gain (db) v dd = 28 vdc f1 = 2135 mhz, f2 = 2145 mhz two--tone measurement, 10 mhz tone spacing 800 ma 1600 ma 1200 ma 14.5 14 13.5 13 40 60 80 100 200 300 --50 --20 20 i dq = 800 ma 2400 ma p out , output power (watts) pep figure 5. third order intermodulation distortion versus output power v dd = 28 vdc f1 = 2135 mhz, f2 = 2145 mhz two--tone measurement, 10 mhz tone spacing --25 --30 --35 --40 --45 40 60 80 100 200 2000 ma 1200 ma 1600 ma 30 --60 --20 0.1 7th order two--tone spacing (mhz) figure 6. intermodulation distortion products versus tone spacing intermodulation distortion (dbc) imd, v dd = 28 vdc, p out = 170 w (pep), i dq = 1600 ma two--tone measurements (f1+f2)/2 = center frequency of 2140 mhz --25 --30 --35 --40 --45 --50 --55 1 10 20 5th order 3rd order 42 58 30 actual p3db = 53.72 dbm (236 w) p in , input power (dbm) figure 7. pulse cw output power versus input power p out , output power (dbm) v dd = 28 vdc, i dq = 1600 ma pulsed cw, 8 sec(on), 1 msec (off) f = 2140 mhz ideal p1db = 52.99 dbm (199 w) 56 54 52 50 48 46 44 32 34 36 38 40 42 d d , drain efficiency (%) intermodulation distortion (dbc) imd, third order
6 rf device data freescale semiconductor mrf5p21180hr6 typical characteristics 0 40 4 --55 --15 g ps acpr im3 p out , output power (watts) w--cdma figure 8. 2--carrier w--cdma acpr, im3, power gain and drain efficiency versus output power im3 (dbc), acpr (dbc) v dd = 28 vdc, i dq = 1600 ma f1 = 2135 mhz, f2 = 2145 mhz 2 x w--cdma, 10 mhz @ 3.84 mhz bandwidth par = 8.5 db @ 0.01% probability (ccdf) 35 --20 30 --25 25 --30 20 --35 15 --40 10 --45 5 --50 6 8 10 30 50 t j , junction temperature ( c) figure 9. mttf factor versus junction temperature this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have cor related to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 220 100 120 140 160 180 200 10 7 10 10 10 9 10 8 mttf factor (hours x amps ) 2 d d , drain efficiency (%), g ps , power gain (db) 10 0.0001 100 0 peak--to--average (db) figure 10. ccdf w--cdma 3gpp, test model 1, 64 dpch, 67% clipping, single carrier test signal probability (%) 10 1 0.1 0.01 0.001 2 4 6 8 w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf figure 11. 2-carrier w-cdma spectrum f, frequency (mhz) --110 --120 --70 --20 --80 --60 --50 (db) --90 --100 --40 --30 3.84 mhz channel bw --im3 in 3.84 mhz bw +im3 in 3.84 mhz bw --acpr in 3.84 mhz bw +acpr in 3.84 mhz bw 20 5 15 10 0 --5 --10 --15 --20 --25 25 w--cdma test signal
mrf5p21180hr6 7 rf device data freescale semiconductor z o = 25
z load f = 2170 mhz f = 2110 mhz z source f = 2170 mhz f = 2110 mhz figure 12. series equivalent source and load impedance f mhz z source
z load
2110 2140 2170 5.39 -- j13.89 5.53 -- j14.51 5.66 -- j13.99 3.69 -- j10.51 3.81 -- j10.66 3.79 -- j11.05 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. v dd = 28 vdc, i dq = 1600 ma, p out = 38 w avg. z source z load input matching network device under test output matching network -- -- + +
8 rf device data freescale semiconductor mrf5p21180hr6 package dimensions case 375d--05 issue e notes: 1. interpret dimensions and tolerances per asme y14.5m--1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. recommended bolt center dimension of 1.52 (38.61) based on m3 screw. style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source dim min max min max millimeters inches a 1.615 1.625 41.02 41.28 b 0.395 0.405 10.03 10.29 c 0.150 0.200 3.81 5.08 d 0.455 0.465 11.56 11.81 e 0.062 0.066 1.57 1.68 f 0.004 0.007 0.10 0.18 g 1.400 bsc 35.56 bsc h 0.082 0.090 2.08 2.29 k 0.117 0.137 2.97 3.48 l 0.540 bsc 13.72 bsc n 1.218 1.242 30.94 31.55 q 0.120 0.130 3.05 3.30 r 0.355 0.365 9.01 9.27 a g l d k 4x q 2x 1 2 4 3 m 1.219 1.241 30.96 31.52 s 0.365 0.375 9.27 9.53 aaa 0.013 ref 0.33 ref bbb 0.010 ref 0.25 ref ccc 0.020 ref 0.51 ref seating plane n c e m m a m aaa b m t b b (flange) h f m a m ccc b m t r (lid) s (insulator) m a m bbb b m t 4x a t m a m bbb b m t (insulator) m a m ccc b m t (lid) pin 5 m a m bbb b m t 4 ni--1230
mrf5p21180hr6 9 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplif iers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 3 oct. 2008 ? modified data sheet to reflect rf test reduction described i n product and process change notification number, pcn12779, p. 1, 2 ? updated part numbers in table 5, component designations and values, to rohs compliant part numbers, p. 3 ? added product documentation and revision history, p. 9
10 rf device data freescale semiconductor mrf5p21180hr6 information in this document is provided solely to enable sy stem and software implementers to use freescale semiconductor products. the re are no express or implied copyright licenses granted hereunder to design or f abricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warr anty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out o f the application or use of any product or circuit, and specifically disclaims any and a ll liability, including without limitation consequential or incidental damages. typical parameters that may be provided in freescale semiconductor data sheets and/or spe cifications can and do vary in different applications and actual performance may v ary over time. all operating parameters, including typicals, must be validated for ea ch customer application by customers technical experts. freescale semiconductor do es not convey any license under its patent rights nor the rights of others. freescale s emiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications inten ded to support or sustain life, or for any other application in which the failure of the frees cale semiconductor product could create a situation where personal injury or death may o ccur. should buyer purchase or use freescale semiconductor products for any su ch unintended or unauthorized application, buyer shall indemnify and hold f reescale semiconductor and its officers, employees, subsidiaries, affiliates, an d distributors harmless against all claims, costs, damages, and expenses, and reasonable attor ney fees arising out of, directly or indirectly, any claim of personal injury or deat h associated with such unintended or unauthorized use, even if such claim alleges t hat freescale semiconductor was negligent regarding the design or manufa cture of the part. freescale and the freescale logo are trademarks of freescale semicond uctor, inc. all other product or service names are the property of their r espective owners. ? freescale semiconductor, inc. 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf5p21180hr6 rev. 3, 10/2008

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